| PART |
Description |
Maker |
| CXK582000TM/YM/M-10LL CXK582000TM/YM/M-85LL |
262144-word x 8-bit High Speed CMOS Static RAM 262144字8位高速CMOS静态RAM
262144-word x 8-bit High Speed CMOS Static RAM
|
Vishay Intertechnology, Inc.
SONY
|
| M5M5V416BUG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V416CWG-55HI02 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
http://
Renesas Electronics Corporation
|
| M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
http://
|
| M5M5V208AKR M5M5V208AKV D99016 M5M5V208AKR-55LW |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M44258-10 M5M44258-7 M5M44258-8 M5M44258BP M5M44 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
| M5M5V208AKV M5M5V208AKV-55HI M5M5V208AKV-70HI |
Memory>Low Power SRAM
2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M44260CJ-7 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模194304位（262144字由16位）动态随机存储器
|
Mitsubishi Electric, Corp.
|
| HM624256AJP-25 |
SRAM Chip, 262144-Word 4-bit High Speed CMOS Static RAM
|
Renesas Technology / Hitachi Semiconductor
|
